Temperature dependence of optical constants for amorphous silicon
- 4 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18), 2186-2188
- https://doi.org/10.1063/1.107074
Abstract
The temperature dependence of the optical constants for amorphous silicon (a‐Si) is studied for two different sample thicknesses at two infrared wavelengths. It is observed that the extinction coefficient of a‐Si can increase significantly with temperature in the strong absorption regime. In addition, using the Mott–Davis formula, results are obtained for the variation of the optical gap energy for a‐Si with temperature, with similar feature observed for both amorphous and crystal silicon.Keywords
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