Electron spin resonance of defects in silicon-on-insulator structures formed by oxygen implantation: Influence of γ irradiation
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1), 175-181
- https://doi.org/10.1063/1.348934
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- The application of submetallic phosphorus-doped Si as ESR markerJournal of Magnetic Resonance (1969), 1988
- Photocurrent multiplication in GaAs Schottky photodiodesSolid-State Electronics, 1987
- Sodium-induced modifications in the electronic structure of the W(100) surfaceJournal of Physics C: Solid State Physics, 1986
- Perturbation model for the thermal-donor energy spectrum in siliconJournal of Physics C: Solid State Physics, 1986
- Classification of Defects in Silicon after Their g−;ValuesPhysica Status Solidi (b), 1983
- center in glassy Si: Microwave saturation properties and confirmation of the primaryhyperfine structurePhysical Review B, 1979
- Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon:In situandex situstudiesPhysical Review B, 1978
- Dangling bonds on siliconPhysical Review B, 1978
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- Dipolar Broadening of Magnetic Resonance Lines in Magnetically Diluted CrystalsPhysical Review B, 1953