Composition dependence of energy gap in GaInAs alloys
- 1 October 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (10), 4608
- https://doi.org/10.1063/1.321415
Abstract
The energy gap of GaInAs alloys, grown by vapor‐phase epitaxial growth using organometallic sources of Ga and In, has been measured over the composition range 0–50 mole% InAs. The energy gap is found to vary linearly with composition. Comparison with data in the literature indicates that highly homogeneous layers can be obtained by the organometallic growth technique.Keywords
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