Samarium chemisorption on group-IV semiconductors
- 15 May 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (10), 5611-5616
- https://doi.org/10.1103/physrevb.29.5611
Abstract
Samarium is an excellent test system with which to study the interaction between chemisorbed metallic overlayers and different kinds of substrates because the configuration is sensitive to the Sm valence state. We used this unique feature to study the chemisorption of Sm on cleaved Ge(111) and Si(111) surfaces. In both cases, synchrotron radiation photoemission spectra exhibited only divalent Sm features at coverages below 2-3 Å and a mixture of trivalent and divalent Sm features at higher coverages. This transition was accompanied by strong adatom-substrate chemical interactions as revealed by large core-level shifts.
Keywords
This publication has 17 references indexed in Scilit:
- Samarium valence changes and reactive interdiffusion at the Si(111)-Sm interfaceSolid State Communications, 1983
- Microscopic investigations of semiconductor interfacesSolid-State Electronics, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Particle-Size-Induced Valence Changes in Samarium ClustersPhysical Review Letters, 1981
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Surface mixed valence in Sm and SmPhysical Review B, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Divalent Surface State on Metallic SamariumPhysical Review Letters, 1978
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Chemisorption and Schottky barrier formation of Ga on Si(111) 7×7Journal of Vacuum Science and Technology, 1976