Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion
- 1 December 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (12), 793-796
- https://doi.org/10.1088/0268-1242/2/12/007
Abstract
Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.Keywords
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