Comments on hot carrier noise in field-effect transistors
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 18 (1), 74-75
- https://doi.org/10.1109/t-ed.1971.17150
Abstract
Taking into account more rigorously such high field effects as velocity saturation and an increasing free carrier temperature, a new derivation is presented for the output noise of the field-effect transistor. It is shown that for devices with a short channel and a high saturation voltage the equivalent noise resistance can increase considerably above the low field value.Keywords
This publication has 4 references indexed in Scilit:
- On the influence of hot carrier effects on the thermal noise of field-effect transistorsIEEE Transactions on Electron Devices, 1970
- Design and performance of the GaAs FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- Field-dependent mobility analysis of the field-effect transistorProceedings of the IEEE, 1965
- Noise Temperature of Hot Electrons in GermaniumPhysical Review Letters, 1962