High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
- 1 February 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (2), 44-46
- https://doi.org/10.1109/55.658598
Abstract
We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFETs). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.Keywords
This publication has 12 references indexed in Scilit:
- GaN/AlGaN MODFET with 80 GHz fmax and >100 V gate-drain breakdown voltageElectronics Letters, 1997
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1996
- Measured microwave power performance of AlGaN/GaN MODFETIEEE Electron Device Letters, 1996
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993
- Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientationApplied Physics Letters, 1993
- Orientation and ion-implanted transverse effects in self-aligned GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984