Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals
- 1 December 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 104 (5), 1281-1290
- https://doi.org/10.1103/physrev.104.1281
Abstract
A theoretical analysis of the scattering of electrons by lattice vibrations in nonpolar crystals is made which permits an estimate of the relative importance of acoustical-mode and optical-mode scattering in monatomic nonmetals. This comparison is achieved by expanding the matrix elements for scattering in powers of the electron wave number. Individual terms are examined in the light of crystal symmetries and the nature of the band minimum associated with the carriers. The order of the first nonvanishing term is obtained in each case. The temperature dependence of the mobility as indicated by these results is compared with that observed in the cases of electrons and holes in silicon and germanium. The observed dependence upon temperature is understandable in terms of the expected relative importance of acoustical- and optical-mode scattering in the cases of holes in silicon and germanium and electrons in germanium. In the case of electrons in silicon, optical modes are not expected to contribute appreciably and the strong temperature dependence must arise from some other mechanism, presumably intervalley scattering. The relation between the results obtained here and those of deformation-potential theory is discussed briefly.Keywords
This publication has 10 references indexed in Scilit:
- Scattering of Holes by Phonons in GermaniumPhysical Review B, 1956
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Deformation Potential Theory for-Type GePhysical Review B, 1956
- Infrared Lattice Absorption in Ionic and Homopolar CrystalsPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Speculations on the Energy Band Structure of Ge—Si AlloysPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- Lattice-Scattering Mobility in GermaniumPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- On the Mobility of Electrons in Pure Non-Polar InsulatorsPhysical Review B, 1948