Atomic layer passivation of GaAs surfaces using InP related compounds

Publisher Website

1 March 1993

journal article
Published by Wiley in Advanced Materials

Vol. 5 (3), 212-214
https://doi.org/10.1002/adma.19930050312

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Ab Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface - A Proposal for New Surface Treatment
Materials Science Forum, 1992
Photoreflectance study of surface Fermi level in GaAs and GaAlAs
Applied Physics Letters, 1990
Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces
MRS Proceedings, 1989
Metal-Dependent Schottky Barrier Height with the (NH₄)₂S_x-Treated GaAs
Japanese Journal of Applied Physics, 1988
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
Applied Physics Letters, 1987

Cited by 5 articles