Diffused junction photovoltaic infrared detectors using Pb1−xGexTe with 0.05⩽x⩽0.11

Abstract

Photovoltaic infrared detectors were fabricated in p‐type Pb_1−xGe_xTe with 0.05?x?0.11 using antimony impurity diffusion to form n‐p junctions. Measurements were performed between 77 and 195 K and the long‐wavelength response cutoffs varied from 3.5 to 4.5 μm. The temperature coefficient of the band gap changed from positive below the ferroelectric Curie temperature to negative above this temperature.