Electrical properties of undoped and Si-doped Al0.48In0.52As grown by liquid phase epitaxy
- 1 December 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11), 1030-1032
- https://doi.org/10.1063/1.94218
Abstract
Electrical properties of undoped Al0.48In0.52As layers grown by liquid phase epitaxy (LPE) were studied for the first time. The carrier concentration n(cm−3) and the mobility μ(cm2/Vs) were μ=4600 cm2/Vs at n=4.7×1015 cm−3 and μ=4500 cm2/Vs at n=5.9×1015 cm−3 at room temperature. The doping data of Si in LPE‐grown Al0.48In0.52As and the resulting mobility and carrier concentration were also studied. The distribution coefficient of Si was determined to be 0.019. The mobility of Al0.48In0.52As is comparable to that of InP when compared at the same carrier concentration.Keywords
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