Electrical properties of polyacetylene/polysiloxane interface

Abstract

Polyacetylene/polysiloxane interface states have been investigated using metal‐insulator‐semiconductor (MIS) diodes. The 1‐mm² MIS diodes (Al/polysiloxane/polyacetylene) have been fabricated by use of a conventional photolithographic technique. The I‐V and C‐V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties. The electrical conduction mechanism in this interface was found to be a Schottky‐Richardson mechanism. Using the C‐V measurements to determine the interface states density distribution, it was found that the distribution had a U shape in the gap and its minimum value was 6×10¹³ eV⁻¹ cm⁻². An attempt was made to fabricate an insulating gate field‐effect transistor which worked as a depletion‐type transistor with a very low transconductance, g_m =13 nΩ⁻¹.