Cadmium−diffused CuInSe2 junction diode and photovoltaic detection

Abstract

Homojunction diodes have been prepared by diffusing cadmium into p−type CuInSe₂. Forward−bias electrical characteristics exhibit a I∝V³ law, indicating double carrier flow. The photovoltaic response of typical diodes has a quantum efficiency of 35−40% in the wavelength region 0.9−1.2 μ.