Ion-implanted silicon profiles in GaAs
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7), 327-329
- https://doi.org/10.1063/1.89386
Abstract
Depth distribution profiles of silicon impurities implanted at 50 to 500 keV have been measured by secondary‐ion mass spectrometry. The as‐implanted profiles are approximately Gaussian with agreement between experiment and theory better than 10% for the projected ranges Rp and within 20% for the standard deviations ΔRp. Negligible diffusion of a 400‐keV implanted silicon profile is observed after a 800 °C 20‐min anneal in a flowing hydrogen/arsenic atmosphere without dielectric encapsulation.Keywords
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