Breakdown field in vapor-grown silicon carbide p-n junctions
- 1 November 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11), 4831-4833
- https://doi.org/10.1063/1.323509
Abstract
The electrical breakdown of one‐sided abrupt p‐n junctions in 6H silicon carbide has been investigated. The diodes are produced by vapor growth and mesa etching. Breakdown fields in the range (2–3.7) ×106 V/cm have been observed for p layers with 1017<NA18 cm−3. These figures tend to support the results of van Opdorp and Vrakking.Keywords
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