Interaction between electronic and vibronic Raman scattering in heavily doped silicon
- 1 August 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 13 (3), 325-328
- https://doi.org/10.1016/0038-1098(73)90602-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Elastic constants and Raman frequencies of heavily doped Si under uniaxial stressSolid State Communications, 1973
- Effect of Carrier Concentration on the Raman Frequencies of Si and GePhysical Review B, 1972
- The Raman effect in crystalsAdvances in Physics, 1964
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- Effects of Configuration Interaction on Intensities and Phase ShiftsPhysical Review B, 1961