AC-Thin Film ZnS:Mn Electroluminescent Device Prepared by Metal Organic Chemical Vapor Deposition
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R)
- https://doi.org/10.1143/jjap.24.1484
Abstract
AC-thin film ZnS:Mn electroluminescent devices are fabricated by the Metal Organic Chemical Vapor Deposition, using dimetylzinc and H2S as source materials. The crystal structure of the MOCVD-prepared ZnS film on glass is (111)-oriented cubic polycrystalline. The electroluminescent center Mn is added into MOCVD-prepared ZnS film through thermal diffusion. The brightness and efficiency of the MOCVD-prepared EL devices are higher than those of the EB-evaporation prepared EL devices having the same structure. The MOCVD-prepared EL devices exhibit few dark spots, and therefore exhibit high stable operation and high breakdown voltage.Keywords
This publication has 5 references indexed in Scilit:
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984
- Efficient D‐C Electroluminescence from ZnS : Mn and ZnS : TbF3 Thin Films Prepared by RF SputteringJournal of the Electrochemical Society, 1983
- A study of the luminescent and electrical characteristics of films of ZnS doped with MnJournal of Luminescence, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltageJournal of Applied Physics, 1981