Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors

Abstract

Room temperature surface emitting lasing near 1.5 μm wavelength was observed via photopumping in vertical cavity structures with epitaxially grown InGaAsP/InP distributed Bragg reflectors. The use of only six 40 Å strained InGaAs quantum wells as gain medium indicated that high reflectivity was achieved in the Bragg reflectors and low threshold current operation would be possible for electric injection with proper current confinement schemes.