Theory of Double Injection into a Semiconductor of Finite Cross-Section
- 1 April 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (4), 535-540
- https://doi.org/10.1143/jpsj.18.535
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growing Helical Density Waves in Semiconductor PlasmasPhysical Review Letters, 1963
- “Oscillistor” Phenomena in Extrinsic SemiconductorsJapanese Journal of Applied Physics, 1962
- Experimental Evidence for Helical Instabilities in a Semiconductor PlasmaJournal of the Physics Society Japan, 1962
- Properties of Injected Plasmas in Indium AntimonidePhysical Review B, 1961
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Current-Voltage Characteristics of Forward Biased LongStructuresPhysical Review B, 1961