Development of high-strength reaction-sintered silicon carbide
- 31 July 2003
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 12 (3-7), 1201-1204
- https://doi.org/10.1016/s0925-9635(03)00066-9
Abstract
No abstract availableKeywords
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- Formation of Silicon Carbide Grains Structure and Their Growth in Polycrystalline SiC Obtained by the Reaction-Sintering TechniqueMaterials Science Forum, 1992
- Formation process of β-SiC during reaction-sinteringJournal of Nuclear Materials, 1976