Gate-drain breakdown effects upon the large signal performance of GaAs MESFETs
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A large-signal, analytic model for the GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1988
- Power-limiting breakdown effects in GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Light emission of GaAs power MESFETs under RF driveIEEE Electron Device Letters, 1980
- Light emission and burnout characteristics of GaAs power MESFET'sIEEE Transactions on Electron Devices, 1978
- Power GaAs MESFET with a High Drain-Source Breakdown VoltageIEEE Transactions on Microwave Theory and Techniques, 1976