Polaron effects on excitons in GaAs-Ga1−xAlxAs quantum wells

Abstract

We have calculated the effects of the electron- and hole-phonon interactions on the ground bound state of an exciton in GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Al}}_{\mathrm{x}}$As quantum wells as a function of the size of the GaAs well. It was found that the polaronic contribution to the exciton binding energies is quite significant and increases with decreasing well thickness. The results thus obtained are also compared with recent experimental data.