Magnetoresistance and Hall effect of a disordered interacting two-dimensional electron gas

Abstract

We calculate the corrections to the resistance $R$ and Hall resistance $R_H$ of a two-dimensional disordered electronic system due to interactions in the strong-field limit ${\omega }_c<{\epsilon }_F$, ${\epsilon }_F\tau >1\mathrm{}$ where localization effects are suppressed. We find that $\Delta {\sigma }_{\mathrm{xy}}=0\mathrm{}$ for both ${\omega }_c{\tau }_{<}^{>}1$. With the result that $\frac{\left(\frac{\delta R_H}{R_H}\right)}{\left(\frac{{\delta }_R}{R}\right)}=\frac{2}{[1-{\left({\omega }_c\tau \right)}^2]}$ oscillating with field because of the field dependence of $\tau$ and eventually diverging when $\left({\omega }_c\tau \right)=1\mathrm{}$. $\delta \frac{R}{R}$ decreases with increasing field going through zero when ${\omega }_c\tau =1\mathrm{}$.