Some Optical Properties of Group II–VI Semiconductors (II)
- 1 January 1965
- journal article
- review article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 12 (1), 3-55
- https://doi.org/10.1002/pssb.19650120102
Abstract
No abstract availableKeywords
This publication has 69 references indexed in Scilit:
- Reflectivity of HgSe and HgTe from 4 to 12 eV at 12 and 300°KPhysical Review B, 1964
- Ultraviolet Absorption of Insulators. II. Partially Ionic CrystalsPhysical Review B, 1964
- Relativistic Corrections to the Band Structure of Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1963
- Reflectivity of Semiconductors with Wurtzite StructurePhysical Review B, 1963
- Band Structure of Silicon, Germanium, and Related SemiconductorsPhysical Review B, 1962
- Über die Lumineszenz und Absorption von ZnO-KristallenThe European Physical Journal A, 1962
- Linear-System Integral Transform RelationsReviews of Modern Physics, 1956
- Model for Luminescence and Photoconductivity in the SulfidesPhysical Review B, 1955
- The edge emission of ZnS, CdS and ZnO and its relation to the lattice vibrations of these solidsPhysica, 1954
- Zum Leuchtmechanismus der KristallphosphoreThe European Physical Journal A, 1942