Bound exciton lifetimes for acceptors in Si
- 1 August 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 23 (7), 425-428
- https://doi.org/10.1016/0038-1098(77)91000-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Optical Properties of Excitons Bound to Neutral Acceptors in GaPPhysical Review B, 1971
- Absorption due to Bound Excitons in SiliconPhysical Review B, 1967
- Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and SiliconPhysical Review Letters, 1966