Phonon Drag inn-Type InSb

Abstract

The electronic and phonon-drag contributions to the thermoelectric power of $n$-InSb have been investigated as a function of temperature and magnetic field. It is found that in zero field, the phonon-drag contribution is negligible except for the temperature region between 10 and 30°K. In the quantum limit, at high field and low temperatures, the phonon-drag contribution becomes quite large. In fact, it dominates the electronic contribution, which increases only logarithmically above its classical saturation value.