Optical spectroscopy of ordered GaAs(001) surfaces obtained by sulfide passivation
- 1 March 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 65-66, 607-613
- https://doi.org/10.1016/0169-4332(93)90727-s
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)BsurfacesPhysical Review B, 1991
- Surface Structure of InAs (001) Treated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1991
- Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound SemiconductorsJapanese Journal of Applied Physics, 1991
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Atomic structure of reconstructed group IV and III–V semiconductor surfacesUltramicroscopy, 1989
- Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limitsJournal of Vacuum Science & Technology B, 1989
- Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAsApplied Physics Letters, 1988
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987