Some aspects of LEC transistor behaviour
- 1 September 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (9), 809-814
- https://doi.org/10.1016/0038-1101(76)90159-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Device physics of integrated injection logicIEEE Transactions on Electron Devices, 1975
- Auger-rekombination in SiSolid State Communications, 1973
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodesIEEE Transactions on Electron Devices, 1969
- Investigation of current-gain temperature dependence in silicon transistorsIEEE Transactions on Electron Devices, 1969
- The temperature dependence of ideal gain in double diffused silicon transistorsIEEE Transactions on Electron Devices, 1968