Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4R)
- https://doi.org/10.1143/jjap.26.550
Abstract
[111]-oriented PZT films have been successfully grown with good epitaxy onto epitaxial platinum film substrates by the rf-magnetron sputtering method using Pb enriched PZT(90/10) targets. The sputtering conditions for growing epitaxial films were investigated. Crystallographic identifications of the films were made by the X-ray and RHEED measurements. Dielectric, ferroelectric and pyroelectric properties of these films were measured. Pyroelectric coefficients at room temperature were determined as 45 and 3×10-9 C/cm2 K for epitaxial PZT films with poling and without poling treatments, respectively. Epitaxial PZT films sputtered on Pt/sapphire possess desirable properties for potential applications to pyroelectric devices.Keywords
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