Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2), 1438-1441
- https://doi.org/10.1103/physrevb.39.1438
Abstract
The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry and directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.
Keywords
This publication has 19 references indexed in Scilit:
- Adsorption and growth of Sn on Si(100) from synchrotron photoemission studiesPhysical Review B, 1988
- Possibility of charge transfer between dimer atoms on Si(100)-(2×1)Physical Review B, 1988
- Coordination determination of In on Si(100) from synchrotron photoemission studiesPhysical Review Letters, 1987
- Photoemission study of Si(111)-Ge(5×5) surfacesPhysical Review B, 1986
- The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studiesSurface Science, 1986
- Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)Physical Review B, 1985
- Angle-resolved photoemission studies of Ge(001)-(2×1)Physical Review B, 1984
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Angle-resolved photoemission, valence-band dispersions, and electron and hole lifetimes for GaAsPhysical Review B, 1980