Spatial distribution of excess carriers in electron-beam excited semiconductors

1 May 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (5), 733-734
https://doi.org/10.1109/PROC.1967.5675

Abstract

The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.

Keywords

RADIATIVE RECOMBINATION
SPONTANEOUS EMISSION
ELECTRON BEAMS
GALLIUM ARSENIDE
EQUATIONS
STEADY-STATE
VOLTAGE
LASER EXCITATION
CHARGE CARRIER DENSITY
CHARGE CARRIER PROCESSES

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