Contact issues in electroluminescent devices from ruthenium complexes
- 2 February 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (5), 807-809
- https://doi.org/10.1063/1.1644918
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Stability of Thin-Film Solid-State Electroluminescent Devices Based on Tris(2,2‘-bipyridine)ruthenium(II) ComplexesJournal of the American Chemical Society, 2003
- Single layer light-emitting devices with high efficiency and long lifetime based on tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphateJournal of Applied Physics, 2001
- Solid-State Organic Light-Emitting Diodes Based on Tris(2,2‘-bipyridine)ruthenium(II) ComplexesJournal of the American Chemical Society, 2000
- Work function modification of indium–tin–oxide used in organic light emitting devicesJournal of Vacuum Science & Technology A, 1999
- Solid-State Light-Emitting Devices Based on the Tris-Chelated Ruthenium(II) Complex. 2. Tris(bipyridyl)ruthenium(II) as a High-Brightness EmitterJournal of the American Chemical Society, 1999
- Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymerJournal of Applied Physics, 1998
- The roles of injection and mobility in organic light emitting diodesJournal of Applied Physics, 1998
- Ionic space-charge effects in polymer light-emitting diodesPhysical Review B, 1998
- Direct evaluation of contact injection efficiency into small molecule based transport layers: Influence of extrinsic factorsJournal of Applied Physics, 1998
- Polymer Light-Emitting Electrochemical CellsScience, 1995