Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (2), 670-677
- https://doi.org/10.1109/3.199321
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Point source heating effects in multiple quantum well modulatorsApplied Physics Letters, 1992
- Fabry–Perot-enhanced self-electro-optic-effect devicesOptics Letters, 1992
- Electro-absorption and refraction in Fabry-Perot quantum well modulators: a general discussionOptical and Quantum Electronics, 1992
- Dynamic optical switching of symmetric self-electro-optic effect devicesApplied Physics Letters, 1991
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturationIEEE Journal of Quantum Electronics, 1991
- Ion implantation for isolation of III-V semiconductorsMaterials Science Reports, 1990
- Improving the Performance of Large Arrays of Symmetric Self Electro-optic Effect DevicesPublished by Springer Nature ,1990
- Symmetric self-electrooptic effect device: optical set-reset latch, differential logic gate, and differential modulator/detectorIEEE Journal of Quantum Electronics, 1989
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Rapid Annealing of GaAs and Related CompoundsMRS Proceedings, 1984