Admittance of p-n junctions containing traps
- 31 October 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (10), 1085-1096
- https://doi.org/10.1016/0038-1101(72)90167-0
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A theoretical expression for the impedance of reverse-biased P-N junctions with deep trapsSolid-State Electronics, 1971
- Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky BarriersJournal of Applied Physics, 1970
- Recombination-Generation and Optical Properties of Gold Acceptor in SiliconPhysical Review B, 1970
- THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICONApplied Physics Letters, 1969
- Characteristics of Neutron Damage in SiliconPhysical Review B, 1968
- Capacitance of Junctions on Gold-Doped SiliconJournal of Applied Physics, 1968
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- Einkristalle undpn-Schichtkristalle aus SiliziumThe European Physical Journal A, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952