Measurement of the conduction-band discontinuity in pseudomorphic InxGa1−xAs/In0.52Al0.48As heterostructures
- 10 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6), 733-735
- https://doi.org/10.1063/1.106552
Abstract
Compositional dependence of the conduction‐band discontinuity ΔEc in InxGa1−xAs/In0.52Al0.48As pseudomorphic heterostructures has been measured as a function of InAs mole fraction over the range of 0.44≤x≤0.64 using both current‐versus‐voltage‐versus‐temperature and capacitance‐versus‐voltage measurements on semiconductor‐insulator‐semiconductor structures. The results show a monotonic increase of effective ΔEc with InAs mole fraction x according to ΔEc≊0.384+0.254x for x≤0.54 and an abrupt shift to ΔEc≊0.344+0.487x for x≥0.58. The effects of the conduction‐band nonparabolicity and the lattice strain on the Fermi potential have been taken into account in deducing ΔEc from the measured barrier height across the InxGa1−xAs/In0.52Al0.48As heterojunction.Keywords
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