Engineering of barrier band structure for electroabsorption MQW modulators

Abstract

The introduction of tensile strain to the barriers of InGaAsP multiquantum well, λ = 1.55 µm, electroabsorption modulators is proposed. It decreases the valence band barrier height, and heavy hole escape time, which greatly increases the optical saturation intensity leading to smaller, lower capacitance modulators with greater power handling capabilities.