Local dimer exchange in surfactant-mediated epitaxial growth
- 17 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (7), 954-957
- https://doi.org/10.1103/physrevlett.68.954
Abstract
While the effectiveness of surfactants in suppressing islanding in Si/Ge heteroepitaxial growth has been demonstrated in previous studies, the atomic scale growth processes have remained unknown. Here we present images of the growing Si(001)/Ge surface obtained with in situ low-energy electron microscopy. From our previous we conclude that surfactant-mediated growth of Ge on Si(001) proceeds by highly local Ge incorporation with minimum surface diffusion. We propose a new two-dimer correlated exchange mechanism to explain this unusual growth mode, as well as the absence of islanding at high Ge coverage.Keywords
This publication has 10 references indexed in Scilit:
- Step structure and interface morphology: Arsenic on vicinal silicon surfacesJournal of Vacuum Science & Technology B, 1990
- Arsenic-induced step rearrangements on vicinal Si (111) substratesApplied Physics Letters, 1989
- Nucleation and growth of epitaxial silicon on Si(001) and Si(111) surfaces by scanning tunneling microscopyUltramicroscopy, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Role of Ostwald ripening in islanding processesApplied Physics Letters, 1987
- Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal SiApplied Physics Letters, 1987
- Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystalsPhysical Review B, 1986
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- The resolution of the low energy electron reflection microscopeUltramicroscopy, 1985
- An analytical reflection and emission UHV surface electron microscopeUltramicroscopy, 1985