Ion-Induced Auger Electron Emission from Si Surface
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9A), L529
- https://doi.org/10.1143/jjap.21.l529
Abstract
Ion-induced Auger electron spectrum of Si was investigated for low energy (2–10 keV) rare gas (Ar or Kr) ion incidence. The angular distribution of ejected Auger electrons was studied for the first time. An integral energy distribution measured with high energy-resolution (Δ E=0.1 eV) revealed that the atomic-like peaks become prominent with an increase of emission angle. The Auger peak feature in the integral spectrum and the emission angle dependence of the Auger peak intensity proved useful in discussing the origin of the Auger electrons.Keywords
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