Write stability of 2.0*20 mu m/sup 2/ M-R memory cells
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 27 (6), 5520-5522
- https://doi.org/10.1109/20.278889
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Dynamic switching process of sandwich-structured MR elementsIEEE Transactions on Magnetics, 1989
- Isothermal annealing behavior of zero-magnetostrictive permalloy films II experimentalIEEE Transactions on Magnetics, 1974