Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure

Abstract

SiC film is epitaxially grown by reacting methane to silicon. The growth rate of the film is measured as a function of the temperature and the partial pressure of methane. The results show that the film thickness is proportional to t ^1/2(ln p+A)^1/2×exp (-4q/2k T) where t is the reaction time, p is the partial pressure of methane, T is the reaction temperature and A is constant. Because of the parabolic rate law, the high activation energy of 4 eV, and the dependence of partial pressure of methane, the rate determining process will be due to the diffusion of carbon atoms through the SiC film. By electron diffraction analysis, the crystal structure of the film is studied. The film is composed of two layers, a single crystal layer and a polycrystalline layer. The single crystal layer is at the surface of the film, and the polycrystalline layer is at the interface of SiC and Si. An epitaxy relationship between SiC and Si is observed.