Control of porous silicon luminescent pattern formation by ion implantation

Abstract

We present a method to generate luminescent patterns of porous silicon. The crystal Si samples were selectively amorphized by self‐implantation through a deposited Al mask. After anodization, the porous Si formed on the crystal regions exhibits visible luminescence, while that on the preamorphized regions does not. The limit of resolution of the light‐emitting patterns is about 2 μm.