Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si

Abstract

Two distinct spectra are reported from an optically detected magnetic resonance study of epitaxial films of cubic SiC. The first is a Lorentzian, single line with g=2.0065±0.0015, which is strong in Al-doped SiC. This line is attributed to residual donors. The second spectrum, observed in both Al-doped and undoped samples, is dominated by a pair of exchange-split lines with g=2.0024 and a=0.095 cm−1. Although a definite assignment of this spectrum cannot be made, spectral dependence studies show it is associated with a defect-related luminescence band in the energy range from 1.6 to 1.9 eV.