A model for the formation of stacking faults in silicon
- 15 January 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (2), 73-75
- https://doi.org/10.1063/1.89292
Abstract
A model for the evolution of stacking faults in silicon during oxidation and during aging of silicon containing oxygen is proposed. Based on the proposed mechanism, the observed role of dislocations, point‐defect clusters constituting the swirl pattern, and abrasion‐induced strain in the generation of stacking faults can be accounted for in a unified manner.Keywords
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