A novel double-heterostructure p-n-junction laser

15 October 1977

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 31 (8), 524-525
https://doi.org/10.1063/1.89762

Abstract

Oxide‐stripe laser and Burrus LED technologies have been combined to enable DH GaAlAs p‐n‐junction lasers with emission perpendicular to the junction plane to be prepared.

Keywords

JUNCTION DIODES
SEMICONDUCTOR LASERS
EMISSION SPECTRA
LASER CAVITIES
CAVITY RESONATORS
FABRICATION
EFFICIENCY
THRESHOLD ENERGY

This publication has 2 references indexed in Scilit:

Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission lines
Optics Communications, 1971
HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
Applied Physics Letters, 1967

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