Epitaxial growth and characterization of GaP on insulating substrates
- 31 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 262-267
- https://doi.org/10.1016/0022-0248(72)90166-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal SpinelJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959