Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode

Abstract

The relationship between surface roughness of indium tin oxide (ITO) and leakage current of organic light-emitting diode (OLED) was investigated. The surface roughness of ITO was measured with atomic force microscope (AFM) before the device fabrication by using these substrates, OLEDs were fabricated and their electrical properties were measured. leakage current of OLEDs depending on the surface roughness of the substrate. In this letter, we report that leakage currents of OLEDs are highly dependent on the peak-to-valley roughness (Rpv) of ITO.