Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices
- 13 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2), 168-170
- https://doi.org/10.1063/1.96932
Abstract
Infrared and atomic composition measurements of a‐Si: H/a‐SiNx: H superlattices as a function of repeat distance show ∼1×1015 cm−2 extra hydrogen bonded to Si at the interface formed when a‐Si:H is deposited on a‐SiNx: H. The H distribution peaks in the first monolayer and decays in the a‐Si:H layer over a distance of ∼19 Å. The hydrogen relieves the large lattice mismatch between the two layers and pacifies defects.Keywords
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