The structure of cleaned and polished (100) GaAs surfaces
- 1 August 1976
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 41 (2), 185-188
- https://doi.org/10.1080/00207217608920625
Abstract
Results are presented here which show that after cleaning in organic solvents, polishing with Br-methanol solution and etching in HCL. all GaAs samples have a residual thin layer of oxide on their surfaces.Keywords
This publication has 1 reference indexed in Scilit:
- Preliminary Results on the Oxidation of GaAs and GaP during Chemical EtchingJournal of the Electrochemical Society, 1971