High Electron Mobility InAs Nanowire Field‐Effect Transistors

Abstract

Single‐crystal InAs nanowires (NWs) are synthesized using metal–organic chemical vapor deposition (MOCVD) and fabricated into NW field‐effect transistors (NWFETs) on a SiO₂/n⁺‐Si substrate with a global n⁺‐Si back‐gate and sputtered SiO_x/Au underlap top‐gate. For top‐gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field‐effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top‐gate geometry. Both the back‐gate and the top‐gate NWFETs exhibit room‐temperature field‐effect mobility as high as 6580 cm² V⁻¹ s⁻¹, which is the lower‐bound value without interface‐capacitance correction, and is the highest mobility reported to date in any semiconductor NW.