C-axis oriented AlN thin films, or AlN 〈001〉, are normally obtained by various reactive deposition methods. We have found the AlN thin films with orientations other than 〈001〉 can be prepared by controlling rf sputter deposition conditions. Three different orientations, 〈001〉, 〈102〉, and 〈101〉, were independently grown and verified by x-ray diffraction. A factor controlling the growth habit is discussed. A cross-sectional transmission electron microscopy/scanning transmission electron microscopy technique with microdiffraction was used to study microstructure of the film. It is found that the AlN thin film is grown in a columnar structure and individual columnar grains were verified to be single crystalline.